RT1A045AP is a low on-resistance, power MOSFET with built-in G-S Protection Diode, small TSST8 package and Pb-free lead plating, RoHS compliant.
The RT1A045AP is a low‑on‑resistance, -12 V power MOSFET offered in a small surface‑mount TSST8 package. It features built‑in gate‑source protection diode, Pb‑free lead plating and RoHS compliance.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, thermal resistance values, and mechanical dimensions, along with typical output and transfer curves to aid circuit designers.
| Continuous drain current (Id) | -4.5 A |
|---|---|
| Power dissipation (Pp) | 1.25 W |
| Junction temperature (Tj) | 150 °C |
| Package | TSST8 (small surface‑mount) |
The maximum continuous drain current is 4.5 A.
It is supplied in a TSST8 small surface‑mount package.
The device can dissipate up to 1.25 W.