RSR030N06 Nch 60V 3A Power MOSFET is a low on-resistance, built-in G-S Protection Diode, Small Surface Mount Package (TSMT3) MOSFET that meets RoHS requirements
The ROHM RSR030N06 is a 60 V, 3 A N‑channel Power MOSFET offered in a small TSMT3 surface‑mount package. The datasheet provides electrical characteristics, absolute maximum ratings, thermal data, and mechanical dimensions for designers.
Key features include low on‑resistance, a built‑in gate‑source protection diode, and compliance with RoHS. Packaging details, recommended reel sizes, and ordering information are also listed.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Pulsed Drain Current (ID,pulse) | 12 A |
| Gate‑Source Voltage (VGS) | 20 V |
| Power Dissipation (PD) | 1 W |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 60 V.
It can conduct a continuous drain current of 3 A.
The gate‑source voltage is limited to 20 V.
The MOSFET may be stored from –55 °C up to +150 °C.