The 1.5V Drive Pch MOSFET RT1A050ZP is a low voltage drive P-channel MOSFET produced by ROHM. It has low on-resistance, high power package and low voltage drive, and is suitable for switching circuits.
The RT1A050ZP is a 1.5 V drive P‑channel MOSFET offered by ROHM. It features low on‑resistance, a high‑power package, and low‑voltage drive capability, making it suitable for switching applications.
The document lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, and capacitances. Typical characteristic curves and measurement circuit diagrams are also included to aid designers in evaluating performance.
| Drain‑source voltage (VDS) | 12 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 5 A |
| Pulsed drain current (ID,pulse) | 20 A |
| Total power dissipation (PD) | 1.25 W |
| Thermal resistance, channel‑to‑ambient (RθJA) | 100 °C/W |
| Input capacitance (Ciss) | 2800 pF |
| Output capacitance (Coss) | 340 pF |
| Reverse transfer capacitance (Crr) | 310 pF |
The maximum drain‑source voltage is 12 V.
The gate threshold voltage ranges from –0.3 V to –1.0 V.
It is supplied in a tape‑and‑reel package with type code TR.
The thermal resistance is specified as 100 °C/W when mounted on a ceramic board.