RSU002N06 is a N-channel MOSFET produced by ROHM company, with high conversion speed, small package and low driving voltage, suitable for switching applications
The ROHM RSU002N06 is a low‑voltage, high‑speed N‑channel MOSFET offered in a compact UMT3 (SC‑70) package. The datasheet provides detailed structure, dimensions, features, and typical application circuits.
Key sections include absolute maximum ratings, electrical characteristics, characteristic curves, packaging specifications, and measurement circuit guidelines, along with safety notices and usage recommendations.
| Drain‑source voltage (V_DSS) | 60 V |
|---|---|
| Gate‑source voltage (V_GSS) | ±20 V |
| Continuous drain current (I_D) | ±250 mA |
| Pulsed drain current (I_DP) | ±1 A |
| Power dissipation (P_D) | 200 mW |
| Maximum channel temperature (T_ch) | 150 °C |
| Storage temperature range (T_stg) | -55 °C to +150 °C |
| Gate threshold voltage (V_GS(th)) | 1.0 V – 2.3 V |
The device can withstand up to 60 V between drain and source.
It is supplied in a UMT3 (SC‑70) surface‑mount package.
The gate threshold voltage ranges from 1.0 V to 2.3 V.
Designers should include ESD protection circuits because the product may age or break down under high‑electrical stress.