RSU002P03 is a 4V drive P-channel MOSFET with low on-resistance and switching characteristics.
The RSU002P03 is a silicon P‑channel MOSFET designed for low on‑resistance switching applications. It features a 4 V drive capability, low R_DS(on), and built‑in body diode protection.
Typical applications include switching circuits in audio‑visual, office‑automation, communications, and consumer electronic devices. The device is supplied in a tape‑and‑reel package (RSU002P03T106) and includes detailed electrical ratings and thermal resistance data for design reference. This manual is written in Chinese.
| Drain‑source breakdown voltage (V_DS max) | -30 V |
|---|---|
| Maximum drain current (I_D) | -0.15 A at V_GS = -4 V |
| Package code | RSU002P03T106 |
The device can tolerate a drain‑source voltage up to -30 V.
It is supplied in the RSU002P03T106 tape‑and‑reel package.
The document advises consulting a ROHM sales representative before using it in safety‑critical applications such as medical or aerospace equipment.