The RSD200N05 is a N-channel MOSFET from ROHM Corporation. It features low on-resistance, high switching speed and simple drive circuits. The device has a maximum voltage rating of 45V, a maximum current rating of 20A, and a maximum power dissipation of 20W.
The RSD200N05 is a 4 V drive N‑channel MOSFET offered by ROHM. The datasheet outlines its structure, key features such as low on‑resistance and fast switching, and typical application areas like switching circuits.
Detailed electrical specifications, characteristic curves, packaging information, and measurement circuit diagrams are included, along with a notice covering usage restrictions and safety considerations.
| Drain‑source voltage (VDS) | 45 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 20 A |
| Pulsed drain current (ID,pulse) | 40 A |
| Power dissipation (PD) | 20 W |
| Maximum junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 45 V.
It can handle a continuous drain current of 20 A.
The device is rated for 20 W of power dissipation.