RSE002P03 is a low-voltage power MOSFET manufactured by Toshiba Corporation. It has a low on-resistance and a small package, making it suitable for use in switching power supplies.
The RSE002P03 is a silicon P‑channel MOSFET with a low on‑resistance, small EMT3 package and a 4 V drive capability. It is intended for switching applications and includes internal ESD and body diodes.
The datasheet lists absolute maximum ratings such as a -30 V drain‑source voltage, +20 V gate‑source voltage, continuous drain current of 0.2 A, and a total power dissipation of 0.15 W. Thermal resistance, package dimensions, and typical electrical characteristic curves are also provided for design reference.
| Drain‑source voltage (V_DSS) | -30 V |
|---|---|
| Gate‑source voltage (V_GSS) | +20 V |
| Continuous drain current (I_D) | 0.2 A |
| Pulsed drain current | 0.4 A |
| Total power dissipation (P_D) | 0.15 W |
| Channel temperature rating | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 833 °C/W |
The device can tolerate up to -30 V drain‑source voltage.
A 4 V drive is specified for the gate.
The MOSFET can be stored from -55 °C up to +150 °C.