RSF010P05 is a low voltage drive MOSFET produced by ROHM. It has low on-resistance, small size, high power and other features.
The RSF010P05 is a 4 V‑drive P‑channel MOSFET offered by ROHM. It features low on‑resistance, a small high‑power package, and low‑voltage drive capability, making it suitable for switching applications.
The document provides detailed electrical characteristics, absolute maximum ratings, thermal resistance data, and typical application circuits. Packaging information and measurement setups are also included, along with legal notices and usage guidelines.
| Drain‑source voltage (VDS) | -45 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 1 A |
| Pulsed drain current (ID,pulse) | 4 A |
| Power dissipation (PD) | 0.8 W |
| Maximum junction temperature (Tj) | 150 °C |
| Typical on‑resistance (RDS(on)) | 450 mΩ |
| Input capacitance (Ciss) | 160 pF |
| Total gate charge (Qg) | 2.3 nC |
The RSF010P05 can withstand a drain‑source voltage of up to –45 V.
The typical on‑resistance is 450 mΩ.
The device is rated for a continuous drain current of 1 A.
The maximum power dissipation is 0.8 W.