This document describes the features and characteristics of the RSE002N06 2.5V Drive Nch MOSFET produced by ROHM Co., Ltd., including high-speed switching, small package, and low voltage drive.
The RSE002N06 is a silicon N‑channel MOSFET designed for high‑speed switching with a low‑voltage (2.5 V) drive capability. It comes in a small EMT3 surface‑mount package and includes built‑in ESD protection diodes.
The sheet lists detailed electrical characteristics such as a 60 V drain‑source breakdown voltage, 20 V gate‑source rating, 250 mA continuous drain current, and 150 mW power dissipation, along with thermal resistance and typical characteristic curves for design reference.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 250 mA |
| Pulsed drain current (ID,pulse) | 1 A |
| Power dissipation (PD) | 150 mW |
| Thermal resistance (RθJA) | 8.33 °C/W |
The device can withstand up to 60 V between drain and source.
It is rated for a gate‑source voltage of up to +20 V.
The MOSFET can conduct a continuous drain current of 250 mA.
It is supplied in an EMT3 surface‑mount package.