RSF014N03 is a 4V drive Nch MOSFET with low On-resistance, space saving, small surface mount package (TUMT3) and 4V drive.
The RSF014N03 is a silicon N‑channel MOSFET offered in a compact TUMT3 surface‑mount package. It features low on‑resistance, space‑saving size, and a 4 V gate‑drive capability, making it suitable for switching applications.
Key electrical ratings include a maximum drain‑source voltage of 30 V, gate‑source voltage of 20 V, continuous drain current of 41.4 A, and a typical on‑resistance of 250 mΩ. The device can dissipate up to 0.8 W and operates over a storage temperature range of –55 °C to +150 °C.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Continuous drain current (ID) | 41.4 A |
| Pulsed drain current (ID,pulse) | 15.6 A |
| Continuous source current (IS) | 0.6 A |
| Total power dissipation (PD) | 0.8 W |
| Storage temperature range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 30 V.
It can handle up to 41.4 A of continuous drain current.
A gate‑drive voltage of 4 V is specified for normal operation.