1.5V Drive Pch MOSFET RW1A013ZP is a silicon P-channel MOSFET produced by ROHM. It has the characteristics of low on-resistance, high power package and low voltage drive. It is suitable for inner circuit switching.
The RW1A013ZP is a silicon P‑channel MOSFET offered by ROHM. It features low on‑resistance, a high‑power package, and can be driven with a low 1.5 V gate voltage. The datasheet provides detailed electrical characteristics, absolute maximum ratings, and recommended application circuits.
Typical specifications include a drain‑source voltage of –12 V, continuous drain current of 13 A, and a total power dissipation of 0.7 W. Packaging information, thermal resistance data, and measurement circuit diagrams are also included, along with legal notices and usage guidelines.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 13 A |
| Pulsed drain current (ID,pulse) | 2.6 A |
| Total power dissipation (PD) | 0.7 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Typical on‑resistance (RDS(on)) | 280 mΩ |
The device is rated for a maximum drain‑source voltage of –12 V.
It can handle a continuous drain current of 13 A.
The MOSFET is designed for a low‑voltage gate drive of 1.5 V.
The maximum power dissipation is 0.7 W.