RUL035N02 is a low voltage drive Nch MOSFET, with low On-resistance, space saving and small surface mount package (TUMT6). It is mainly used in switching power supplies.
The RULO35N02 is a low‑on‑resistance N‑channel MOSFET designed for 1.5 V gate drive operation. It features a compact TUMT6 surface‑mount package, making it suitable for space‑constrained designs and offering low voltage drive capability.
Key specifications include a 20 V drain‑source rating, 43.5 A continuous drain current, typical on‑resistance of 38‑53 mΩ, and input/output capacitances of 460 pF and 110 pF respectively. The device also incorporates an internal body diode and is rated for a maximum junction temperature of 150 °C.
| Drain‑source voltage (V_DSS) | 20 V |
|---|---|
| Gate‑source voltage (V_GSS) | +10 V |
| Continuous drain current (I_D) | 43.5 A |
| Pulsed drain current (I_D(pulse)) | +7 A |
| Continuous source current (I_S) | 0.8 A |
| Total power dissipation (P_D) | 1.0 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| On‑resistance (R_DS(on), typical) | 38–53 mΩ |
| Input capacitance (C_iss) | 460 pF |
| Output capacitance (C_oss) | 110 pF |
| Reverse transfer capacitance (C_rss) | 60 pF |
| Total gate charge (Q_g) | 5.7 nC |
| Body diode forward voltage (V_F) | 1.2 V |
The device is rated for a maximum drain‑source voltage of 20 V.
It can handle a continuous drain current of 43.5 A.
Typical on‑resistance ranges from 38 mΩ to 53 mΩ.