This document describes the features and characteristics of ROHM's RUM002N05 product, including high speed switching, small package, and low voltage drive.
The RUM002N05 is a 1.2 V drive N‑channel MOSFET offered in a small VMT3 package. It features high‑speed switching, ultra‑low voltage drive, and a compact form factor suitable for a variety of electronic equipment.
The datasheet lists absolute maximum ratings such as a 50 V drain‑source voltage and 200 mA continuous drain current, along with detailed electrical characteristics, typical output curves, and measurement circuit diagrams to aid designers in implementing the device safely.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (IDP) | 800 mA |
| Power dissipation (PD) | 150 mW |
| Channel temperature (TCH) | 150 °C |
The device can tolerate up to 50 V between drain and source.
The gate‑threshold voltage ranges from 0.3 V to 1.0 V.
It is supplied in a VMT3 package with type code T2L, packaged in tape and 8 000 pieces per unit.