1.5V Drive Nch MOSFET RUQ050N02 is a low-voltage MOSFET with low on-resistance, small package, 1.5V drive, and is suitable for switching circuits.
The RUQO50N02 is a 1.5 V drive N‑channel MOSFET offered in a compact TSMT6 surface‑mount package. It features low on‑resistance, a small footprint, and is suitable for switching applications.
The datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, continuous and pulsed drain currents, on‑resistance, and body‑diode parameters. Packaging information, measurement circuits, and typical performance curves are also included.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 5.0 A |
| Pulsed drain current (ID,pulse) | 10 A |
| On‑resistance (RDS(on)) typical | 27 mΩ |
| Total power dissipation (PD) | 1.25 W |
| Thermal resistance (RθJA) | 100 °C/W |
| Storage temperature range | -55 °C to +150 °C |
The device can handle a continuous drain current of 5.0 A.
It is supplied in a TSMT6 surface‑mount package with type code TR and a basic ordering unit of 3000 pieces.
The gate threshold voltage ranges from 0.3 V to 1.0 V.