This document introduces the structure, dimensions, features, and applications of ROHM's 1.2V Nch MOSFET RUE002N05. It also provides packaging specifications, absolute maximum ratings, and thermal resistance information.
The RUE002N05 is a 1.2 V drive N‑channel MOSFET offered in a small EMT3 (SOT‑416) package. It features high‑speed switching, low voltage drive, and a compact footprint suitable for space‑constrained designs.\n\nThe datasheet lists absolute maximum ratings, typical electrical characteristics, and typical characteristic curves. Packaging details, ordering information (3000‑piece basic unit), and measurement circuit examples are also included, along with a notice covering usage limits and safety considerations.
| Drain‑source voltage (VDS) max | 50 V |
|---|---|
| Gate‑source voltage (VGS) max | ±8 V |
| Continuous drain current (ID) max | 200 mA |
| Pulsed drain current (ID) max | 800 mA |
| Power dissipation (PD) max | 150 mW |
| Channel temperature (TCH) max | 150 °C |
| Storage temperature (TSTG) range | -55 °C to +150 °C |
| On‑state resistance (RDS(on)) typical | 0.37 Ω (at ID=100 mA, VDS=1.8 V) |
| Input capacitance (CISS) typical | 25 pF |
| Output capacitance (COSS) typical | 6 pF |
| Reverse transfer capacitance (CRSS) typical | 3 pF |
| Turn‑on delay time (tON) typical | 4 ns |
| Rise time (tr) typical | 6 ns |
| Turn‑off delay time (tOFF) typical | 15 ns |
The device can withstand up to 50 V between drain and source.
The basic ordering unit is 3000 pieces.
Typical RDS(on) is about 0.37 Ω at a drain current of 100 mA and VDS of 1.8 V.
It can be stored from –55 °C up to +150 °C.