RUU002N05 is a N-channel MOSFET from ROHM. It features high switching speed, small package and low drive voltage. It is suitable for switching applications.
The ROHM RUU002N05 is a 1.2 V drive N‑channel MOSFET in a small UMT3 package. The document provides the device’s features, absolute maximum ratings, and typical electrical characteristics for designers.
Key sections include features, application notes, absolute maximum ratings, detailed electrical specifications, characteristic curves, measurement circuit examples, and legal notices. The data sheet is intended for use in general‑purpose electronic equipment such as audio‑visual, office, and communication devices.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 800 mA |
| Power dissipation (PD) | 200 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 50 V.
It can handle a continuous drain current of 200 mA.
The gate‑source voltage rating is up to +8 V.
The device is rated for a maximum junction temperature of 150 °C.