RUR040N02 is a 1.5V drive N-channel MOSFET. It features low on-resistance, built-in G-S protection diode and small surface mount package (TSMT3). It is suitable for switching applications.
The RURO40N02 is a 1.5 V drive N‑channel MOSFET featuring low on‑resistance, a built‑in gate‑source protection diode, and a compact TSMT3 surface‑mount package. It is intended for switching applications and includes typical application circuit examples.
Key specifications include a 20 V drain‑source voltage rating, +10 V gate‑source rating, continuous drain current of 4.0 A (pulsed 8.0 A), total power dissipation of 1.0 W, and a thermal resistance of 125 °C/W. Detailed electrical characteristics, body‑diode behavior, and characteristic curves are provided.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 4.0 A |
| Pulsed drain current (ID,pulse) | 8.0 A |
| Total power dissipation (PD) | 1.0 W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 125 °C/W |
| Package | TSMT3 surface‑mount |
| Built‑in protection diode | Yes |
The device is rated for a maximum drain‑source voltage of 20 V.
It can conduct a continuous drain current of 4.0 A.
The MOSFET is supplied in a small surface‑mount TSMT3 package.
Yes, it has a built‑in gate‑source protection diode.