This document describes the features and characteristics of the ROHM 1.5V Drive Nch MOSFET RUF020N02, including low on-resistance, small surface mount package, and low voltage drive.
The RUF020N02 is a low‑on‑resistance, 1.5 V‑drive N‑channel MOSFET offered in a compact TUMT3 surface‑mount package. It is intended for switching applications and includes built‑in ESD and body diodes.
The document lists absolute maximum ratings, typical electrical parameters, and characteristic curves, as well as packaging and handling notes. It also contains safety and usage warnings for designers.
| Drain‑source voltage (V_DSS) | 20 V |
|---|---|
| Gate‑source voltage (V_GSS) | +10 V |
| Continuous drain current (I_D) | +2 A |
| Pulsed drain current (I_D(pulse)) | +6 A |
| Continuous source current (I_S) | 0.6 A |
| Total power dissipation (P_D) | 0.8 W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 156 °C/W |
| Storage temperature range | -55 °C to +150 °C |
| Package type | TUMT3 surface‑mount |
| Low‑voltage drive | 1.5 V |
The device is rated for a maximum drain‑source voltage of 20 V.
It can conduct a continuous drain current of up to 2 A.
The MOSFET is supplied in a TUMT3 surface‑mount package.
The device is designed for a low‑voltage drive of 1.5 V.