RUE002N02 is a low voltage drive Nch MOSFET from ROHM with fast switching speed and low drive voltage.
The RUE002N02 is a low‑voltage, 1.2 V drive N‑channel MOSFET designed for portable equipment. It features fast switching speed, simple drive circuits, and built‑in ESD protection.
The datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, and on‑state resistance, along with typical application curves and measurement guidelines.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Total power dissipation (PD) | 150 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The device can tolerate up to 20 V between drain and source.
A low‑voltage drive of 1.2 V is suitable for this MOSFET.
It can be stored from –55 °C up to +150 °C.
The part is supplied in a Taping LH package with a basic ordering unit of 8 3000 pieces.