The RU1L002SN is a ROHM Nch MOSFET with features such as low voltage drive (2.5V drive), low on-resistance, and small package (UMT3F). It is suitable for switching applications.
The RU1L002SN is a 2.5 V drive N‑channel MOSFET from ROHM, featuring low on‑resistance, a low gate‑drive voltage and a compact UMT3F package.
The datasheet lists key specifications such as a 60 V drain‑source rating, 250 mA continuous drain current, 200 mW power dissipation and a thermal resistance of 625 °C/W, and includes characteristic curves, body‑diode data and measurement circuit diagrams.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Gate‑source voltage (Vgs) | ±20 V |
| Continuous drain current (Id) | 250 mA |
| Pulsed drain current (Id,p) | 1 A |
| Power dissipation (Pd) | 200 mW |
| Thermal resistance (RθJA) | 625 °C/W |
| Storage temperature range | -55 °C to +150 °C |
The maximum drain‑source voltage is 60 V.
Typical Rds(on) is 2.1 Ω at Id = 250 mA and Vds = 4.5 V.
It is supplied in a small UMT3F surface‑mount package.
It operates with a low gate‑drive voltage of 2.5 V.