RVQ040N05 is a 45V 4A power MOSFET with features such as low on-resistance, built-in G-S protection diode, and small surface mount package.
The RVQ040N05 is a 45 V, 4 A N‑channel power MOSFET supplied in a TSMT6 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode and complies with RoHS standards. Key electrical ratings include a maximum drain‑source voltage of 45 V, continuous drain current of 4 A, pulsed drain current of 16 A and a typical power dissipation of 1.25 W.
The datasheet also lists thermal resistance values, capacitance parameters (Ciss 530 pF, Coss 120 pF, Crss 65 pF), and detailed mechanical dimensions for the TSMT6 package. Packaging specifications, ordering units and application notes are provided for designers integrating the MOSFET into DC‑DC converters, motor drivers and other electronic equipment.
| Drain‑Source voltage (VDS) | 45 V |
|---|---|
| Continuous drain current (ID) | 4.0 A |
| Pulsed drain current (ID,pulse) | 16 A |
| Gate‑Source voltage (VGS) | 21 V |
| Power dissipation (PD) | 1.25 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
The RVQ040N05 can withstand up to 45 V between drain and source.
It is rated for a continuous drain current of 4 A.