RUC002N05 is a 1.2V drive Nch MOSFET with high switching speed, small package and ultra low drive voltage, suitable for switching applications
The RUC002N05 is a 1.2 V drive N‑channel MOSFET offered in a SOT‑23 package. It features high‑speed switching, a small footprint, and ultra‑low voltage drive suitable for a variety of switching applications.
The document provides absolute maximum ratings, detailed electrical characteristics, characteristic curves, and measurement circuit examples, along with legal notices and usage guidelines.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (IDp) | 800 mA |
| Source current (IS) | 150 mA |
| Power dissipation (PD) | 200 mW |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 625 °C/W |
| Input capacitance (Ciss) | 25 pF |
| Output capacitance (Coss) | 6 pF |
| Reverse transfer capacitance (Cres) | 3 pF |
| Body diode forward voltage (VF) | 1.2 V |
The device can withstand up to 50 V drain‑source voltage.
The gate‑source voltage rating is +8 V.
It is rated for a continuous drain current of 200 mA.
The body diode forward voltage is specified as 1.2 V.