RUF025N02 is a Nch MOSFET with low on-resistance, small package and low driving voltage, which is used in switching circuits.
The RUFO25N02 is a silicon N‑channel MOSFET designed for low‑voltage (1.5 V) drive applications. It features a compact TUMT3 surface‑mount package and includes built‑in ESD protection and a body diode.
Key specifications include a 20 V drain‑source rating, 42.5 A continuous drain current, 0.8 W power dissipation, and a thermal resistance of 156 °C/W. The device is intended for switching applications and is supplied in tape‑and‑reel packaging (3000 pieces per reel).
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 42.5 A |
| Pulsed drain current (ID,pulse) | 5 A |
| Source current (IS) | 0.6 A |
| Total power dissipation (PD) | 0.8 W |
| Maximum junction temperature | 150 °C |
| Thermal resistance (RθJA) | 156 °C/W |
| On‑resistance (RDS(on), typical) | 49 mΩ |
The device can withstand up to 20 V between drain and source.
It is rated for a continuous drain current of 42.5 A.
The typical on‑resistance is about 49 mΩ.