RXH125N03 is a low on-resistance N-channel MOSFET with built-in G-S protection diode from ROHM. It is suitable for switching applications.
The RXH125N03 is a 4 V drive N‑channel MOSFET offered in a small SOP8 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and is intended for switching applications in general‑purpose electronic equipment.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, on‑state resistance, capacitances, and thermal resistance, as well as measurement circuit diagrams and legal notices.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) typical | 12.5 A |
| Source current continuous (IS) | 1.6 A |
| Power dissipation (PD) max | 2.0 W |
| Thermal resistance (RθJA) | 62.5 °C·W |
| Input capacitance (Ciss) | 1000 pF |
| Output capacitance (Coss) | 340 pF |
| Reverse transfer capacitance (Crss) | 170 pF |
| Total gate charge (Qg) | 12.7 nC |
The device can withstand up to 30 V drain‑source voltage.
The typical on‑state resistance is 13.3 mΩ at 12.5 A.
It is supplied in a small surface‑mount SOP8 package.