RXR035N03 is a N-channel MOSFET with low on-resistance, built-in G-S Protection Diode and small Surface Mount Package. It is suitable for switching applications.
The RXRO35N03 is a 4 V drive N‑channel MOSFET offered in a small surface‑mount TSMT3 package. It features low on‑resistance, a built‑in gate‑source protection diode, and is suitable for switching applications.
The document lists absolute maximum ratings, thermal resistance, and detailed electrical parameters such as drain‑source voltage, continuous and pulsed drain currents, and capacitances. Application circuits and measurement setups are also included, along with legal notices and usage guidelines.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 43.5 A |
| Pulsed drain current (IDP) | 12 A |
| Source current (IS) | 0.8 A |
| Power dissipation (PD) | 1.0 W |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Thermal resistance (RθJA) | 125 °C/W |
| Input capacitance (CISS) | 180 pF |
| Output capacitance (COSS) | 70 pF |
| Reverse transfer capacitance (CRES) | 35 pF |
| Body diode forward voltage (VFD) | 1.2 V |
| Total gate charge (Qg) | 3.3 nC |
| Gate‑source charge (Qgs) | 1.0 nC |
| Gate‑drain charge (Qgd) | 1.0 nC |
The maximum drain‑source voltage is 30 V.
It can handle a continuous drain current of 43.5 A.
It is supplied in a small surface‑mount TSMT3 package.
The device can be stored from –55 °C to +150 °C.