RQX040N03 is a Nch 30V 4A power MOSFET produced by ROHM. It has the characteristics of low on-resistance, built-in G-S protection diode and small package.
The RXQ040N03 is a 30 V, 4 A Power MOSFET offered by ROHM in a compact TSMT6 surface‑mount package. The datasheet provides electrical characteristics, thermal data, packaging details and mechanical dimensions for designers.
Key features include low on‑resistance, a built‑in gate‑source protection diode, and RoHS‑compliant lead‑free plating. The document also contains typical application curves, maximum ratings, and a notice on usage restrictions.
| Drain‑Source voltage (Voss) | 30 V |
|---|---|
| Continuous drain current (Id) | 4.0 A |
| Pulsed drain current (Id,pulse) | 12 A |
| Gate‑Source voltage (Vess) | +20 V |
| Power dissipation (Pp) | 1.25 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance, junction‑ambient (typ) | 100 °C/W |
| Package type | TSMT6 |
The device can handle a continuous drain current of 4.0 A at 25 °C.
The MOSFET is rated for a drain‑source breakdown voltage of 30 V.
It is supplied in a TSMT6 surface‑mount package.