This document describes the features and dimensions of ROHM's 4V Drive Nch MOSFET RXH090N03. The product features low on-resistance, built-in G-S protection diode, and a small surface mount package (SOP8), making it suitable for switching applications.
The RXHO90N03 is a 4 V‑drive N‑channel MOSFET offered in a small SOP8 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and is suitable for switching applications.
The document provides absolute maximum ratings, thermal resistance, detailed electrical parameters, characteristic curves, and measurement circuit diagrams, along with legal notices and usage guidelines.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 19 A |
| Pulsed drain current (ID,pulse) | 43.6 A |
| Continuous source current (IS) | 1.6 A |
| Power dissipation (PD) | 2.0 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 62.5 °C/W |
| Input capacitance (Ciss) | 440 pF |
| Output capacitance (Coss) | 170 pF |
| Reverse transfer capacitance (Crss) | 85 pF |
| Turn‑on delay time (t_on) | 8 ns |
| Rise time (tr) | 30 ns |
| Total gate charge (Qg) | 6.8 nC |
| Gate‑source charge (Qgs) | 1.6 nC |
| Gate‑drain charge (Qgd) | 2.6 nC |
| Body diode forward voltage | 1.2 V |
The RXHO90N03 can withstand up to 30 V between drain and source.
The device is rated for a continuous drain current of 19 A.
It is supplied in a small surface‑mount SOP8 package.
The thermal resistance (RθJA) is 62.5 °C/W.