This document describes the features and characteristics of the 4V Drive Pch MOSFET UM6J1N from ROHM Co., Ltd., including the independence of the two RSU002P03 transistors in a single UMT package and the reduction in mounting cost and area.
The UM6J1N is a 4 V P‑channel MOSFET offered by ROHM. It features two independent transistors in a single UMT package, reducing mutual interference and cutting mounting cost and area.
The datasheet lists key specifications such as a -30 V drain‑source voltage, +20 V gate‑source voltage, continuous drain current of 0.2 A, and a pulsed drain current of 40.4 A. It also provides packaging information (Tape Type Code TN) and notes that the device is intended for switching applications and operates within a storage temperature range of –55 °C to +150 °C.
| Drain‑source voltage (Voss) | -30 V |
|---|---|
| Gate‑source voltage (Vass) | +20 V |
| Continuous drain current (Ib) | 0.2 A |
| Pulsed drain current | 40.4 A |
| Maximum channel temperature | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Thermal resistance (Rth ch‑a) | 833 °C/W |
| Packaging type code | TN |
The maximum drain‑source voltage is -30 V.
It is intended for switching applications.
The packaging type code is TN.
It can be stored from -55 °C to +150 °C.