This document describes the features and characteristics of the US6X6 Transistors Rev.B 1/2 low frequency amplifier, including large collector current and a maximum saturation voltage of 350mV.
The US6X6 is a low‑frequency amplifier transistor intended for applications such as drivers and audio‑visual equipment. The document lists its key features, absolute maximum ratings, and recommended mounting on a 25 mm × 25 mm × 0.8 mm ceramic substrate.
Detailed electrical parameters, including collector‑base voltage, collector‑emitter voltage, current gain, and transition frequency, are presented together with packaging specifications and characteristic curves. An appendix contains legal notices and export‑control information.
| Collector‑base voltage Vcbo | 30 V |
|---|---|
| Collector‑emitter voltage Vceo | 30 V |
| Emitter‑base voltage Vebo | 6 V |
| Collector current Ic | 15 A |
| Power dissipation Pc | 3 W |
| Junction temperature Tj | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| DC current gain hFE | 270 – 680 |
| Transition frequency fT | 300 MHz |
| Collector output capacitance Cob | 11 pF |
The maximum collector current is 15 A.
The device is supplied in a tape package, type code TR, with a basic ordering unit of 3000 pieces.
A 25 mm × 25 mm × 0.8 mm ceramic substrate is recommended.