This document describes the features and characteristics of ROHM's UM6K33N MOSFET product, including high-speed switching, small package, and ultra-low voltage drive.
The UM6K33N is a 1.2 V drive N‑channel MOSFET offered by ROHM in a compact UMT6 (SOT‑383) package. It is designed for high‑speed switching with low drive voltage and small footprint.
The sheet lists absolute maximum ratings, typical on‑state resistance, capacitances, and switching times, as well as recommended application circuits and ESD protection guidelines. Thermal resistance and packaging details are also included for designers.
| Drain‑source voltage (V_DSS) max | 50 V |
|---|---|
| Gate‑source voltage (V_GSS) max | +8 V |
| Continuous drain current (I_D) typical | 200 mA |
| Pulsed drain current (I_D) max | 800 mA |
| Power dissipation total | 150 mW |
| Power dissipation per element | 120 mW |
| Channel temperature max | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| On‑state resistance (R_on) typical | 1.9 Ω (100 mA) |
| Input capacitance (Ciss) typical | 25 pF |
| Output capacitance (Coss) typical | 6 pF |
| Turn‑on delay time | 4 ns |
| Rise time | 6 ns |
| Body diode forward voltage | 1.2 V |
The UM6K33N can withstand up to 50 V drain‑source voltage.
It is supplied in a UMT6 (SOT‑383) package.
The device is designed for an ultra‑low 1.2 V drive voltage.
It can be stored from –55 °C up to +150 °C.