BB403M is an individual type number of HITACHI BBFET, it is a MOS FET IC VHF/UHF RF Amplifier with build in Biasing Circuit. It has high forward transfer admittance (|yfs|=42 mS typical value, f=1kHz) and built in ESD absorbing diode, which can withstand up to 250V at C=200pF, Rs=0 conditions.
The BB403M is a VHF/UHF RF amplifier MOSFET IC with a built‑in biasing circuit and ESD‑absorbing diode. It is offered in a compact MPAK‑4R (SOT‑143) package and features a high forward transfer admittance of 42 mS at 1 kHz.
The datasheet lists absolute maximum ratings, typical electrical parameters, and test circuits for gain, noise figure, and capacitance measurements. Package dimensions and legal cautions are also included.
| Drain‑to‑source voltage (VDS) | 7 V |
|---|---|
| Gate‑to‑source voltage (VGS) | -0 V to +7 V |
| Drain current (ID) | 25 mA |
| Channel power dissipation (PCH) | 150 mW |
| Channel temperature (TCH) | 150 °C |
| Input capacitance (CISS) typical | 3.3 pF |
| Output capacitance (COSS) typical | 24 pF |
| Forward transfer admittance (YFS) typical | 42 mS at 1 kHz |
| Noise figure NF1 typical | 1.6 dB at 200 MHz |
| Power gain PG1 typical | 32 dB at 200 MHz |
| Package type | MPAK‑4R (SOT‑143 variant) |
The BB403M can handle a maximum drain current of 25 mA.
Typical forward transfer admittance is 42 mS measured at 1 kHz.
The device is supplied in an MPAK‑4R (SOT‑143) miniature mold package.