1SS82 is a high-voltage switching silicon epitaxial planar diode with a rated reverse voltage of 200 V. The diode has high reliability and is glass-sealed.
The 1SS82 is a silicon epitaxial planar diode designed for high‑voltage switching. It features a high reverse voltage rating, glass‑sealed reliability, and is supplied in a DO‑35 package.
Key specifications include a peak reverse voltage of 1250 V, forward voltage around 1.0 V at 100 mA, and a junction temperature limit of 175 °C. The document also contains cautions about usage limits, storage temperature, and liability notices.
| Peak reverse voltage (VRM) | 1250 V |
|---|---|
| Reverse voltage (VR) | 200 V |
| Peak forward current (IFM) | 625 mA |
| Average forward current (IO) | 200 mA |
| Power dissipation (Pd) | 400 mW |
| Junction temperature (Tj) | 175 °C |
| Typical forward voltage (VF) | 1.0 V at 100 mA |
| Typical reverse current (IR) | 0.2 µA at VR=200 V |
| Capacitance (C) | 1.5 pF at 0 V, 1 MHz |
The diode can withstand a peak reverse voltage of 1250 V.
It is supplied in a DO‑35 glass‑sealed package.
The storage temperature range is –65 °C to +175 °C.