The 2SA1200 is a high‑voltage PNP silicon transistor with a triple‑diffused structure, intended for switching applications. It is supplied in a small flat package mounted on a ceramic substrate.
Key specifications include a collector‑base voltage of 150 V, collector‑emitter voltage of 150 V, and a maximum collector current of 50 mA. The datasheet also lists electrical characteristics such as DC current gain, transition frequency, and safe operating area curves to aid designers in selecting appropriate bias conditions.
| Collector‑Base Voltage (VcBO) | 150 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 150 V |
| Emitter‑Base Voltage (VEB0) | -5 V |
| Collector Current (Ic) | 50 mA |
| Base Current (Ip) | 10 mA |
| Collector Power Dissipation (Pc) | 0.5 W |
| Collector Power Dissipation (Pc*) | 0.8 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The maximum collector‑emitter voltage is 150 V.
The device can be stored from –55 °C up to 150 °C.
The transistor is rated for a maximum collector current of 50 mA.