The 2SA1170 is a silicon PNP epitaxial planar transistor offered by Toshiba. This datasheet provides the electrical characteristics, maximum ratings, and typical switching performance of the device.
Key parameters include voltage limits, current capabilities, power dissipation, temperature ranges, and switching frequency. The document also contains package dimensions and typical test circuit diagrams for evaluating the transistor's performance. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 200 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 200 V |
| Emitter‑Base Voltage (Vebo) | 6 V |
| Maximum Collector Current (Ic) | 17 A |
| Power Dissipation (Pd) | 200 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Ts) | -55 °C to 150 °C |
| Typical Switching Frequency | 20 MHz |
| Collector Saturation Voltage (Vcesat) | 2.5 V (max) |
The transistor can handle up to 17 A of collector current.
The device can dissipate up to 200 W under the specified test conditions.
It can be stored from –55 °C up to 150 °C.