The 2SA1202 is a silicon PNP epitaxial power transistor designed for audio‑amplifier driver applications and other low‑power amplification tasks. It is supplied in a small flat package and is complementary to the 28C2882 device.
The datasheet lists key electrical parameters such as voltage ratings, current limits, power dissipation, and temperature ranges, and includes characteristic curves and safe‑operating‑area graphs to aid designers in selecting appropriate operating conditions.
| Collector‑Base Voltage (Vcbo) | 80 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 80 V |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 400 mA |
| Base Current (Ip) | 80 mA |
| Collector Power Dissipation (Pc) | 500 mW |
| Storage Temperature Range | -55 °C to 150 °C |
| Weight | 0.05 g |
The maximum collector current is 400 mA.