The 2SA1204 is a PNP silicon epitaxial transistor (PCT process) intended for use in audio‑frequency amplifier output stages up to about 1 W. It is supplied in a small flat ceramic package and is complementary to the 2SC2884 device.
The document lists key electrical parameters such as collector‑base voltage, collector‑emitter voltage, current gain, and safe operating area, together with maximum ratings, temperature limits, and storage conditions. Safety and reliability notes remind users to operate the device within the specified limits and to consult Toshiba’s Semiconductor Reliability Handbook.
| Collector‑Base Voltage (VCBO) | -35 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -30 V |
| Emitter‑Base Voltage (VEB) | -5 V |
| Collector Current (Ic) | 800 mA |
| Base Current (Ib) | 160 mA |
| Collector Power Dissipation (Pc) | 500 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| DC Current Gain (hFE) | 100 to 320 |
The maximum collector current is 800 mA (continuous) as specified in the maximum ratings.
The collector‑emitter breakdown voltage (VCEO) is rated at -30 V.
The device can be stored from -55 °C up to 150 °C.
The DC current gain ranges from 100 to 320.