The 2SA1182 is a silicon PNP epitaxial transistor intended for low‑power audio‑frequency and driver‑stage amplifier applications. The document lists its electrical parameters, maximum ratings, and typical usage notes for designers.
Key specifications include collector‑base, collector‑emitter and emitter‑base voltage limits, current ratings, storage temperature range, and transition frequency. The sheet also contains reliability notices and references to Toshiba's semiconductor handbook.
| Collector‑Base Voltage (VCBO) | -35 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -30 V |
| Emitter‑Base Voltage (VEBO) | -5 V |
| Collector Current (IC) | 500 mA |
| Base Current (IB) | 50 mA |
| Storage Temperature Range (Tstg) | -55 °C to 125 °C |
| Transition Frequency (fT) | 200 MHz |
The maximum collector current is 500 mA.
The collector‑base voltage rating is –35 V.
It can be stored from –55 °C up to 125 °C.
The transition frequency is approximately 200 MHz.