This document describes the features of the 2SA0720A (2SA720A) silicon PNP epitaxial planar transistor, which is suitable for the driver stage of a low-frequency amplifier. The transistor has a high collector-emitter voltage and is optimal for the driver stage of a low-frequency and 25W to 30W output amplifier.
The 2SA0720A is a silicon PNP epitaxial planar transistor designed for low‑frequency driver amplification stages, complementary to the 2SC1318A. The document lists its absolute maximum ratings, electrical characteristics, and typical application guidance.
In addition to the technical data, the sheet includes export and liability notices, storage temperature limits, and recommended operating conditions such as a 25 °C test temperature.
| Collector‑base voltage (Emitter open) | -80 V |
|---|---|
| Collector‑emitter voltage (Base open) | -70 V |
| Peak collector current | 1 A |
| Collector power dissipation | 625 mW |
| Junction temperature | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum collector‑emitter voltage (Base open) is -70 V.
The transistor can handle a peak collector current of 1 A.
It can be stored from -55 °C up to +150 °C.