This document describes the features and characteristics of 2SA0683 and 2SA0684, which are silicon PNP epitaxial planar transistors suitable for low-frequency power amplification and driver amplification. They are complementary to 2SC1383 and 2SC1384.
This datasheet provides the specifications for the Panasonic 2SA683 and 2SA684 silicon PNP epitaxial planar transistors, intended for low‑frequency power and driver amplification. It includes key features, absolute maximum ratings, and electrical characteristics.
The document also contains package information, safe‑operation area curves, and legal export notices. All values are given for a test temperature of 25 °C unless otherwise noted.
| Collector current (I_C) | -1 A |
|---|---|
| Power dissipation (P_C) | 1 W |
| Junction temperature (T_j) | 150 °C |
| Storage temperature (T_stg) | -55 to +150 °C |
They can be stored from -55 °C to +150 °C.