TT8M2 is a 2.5V driven Nch MOSFET and 1.5V driven Pch MOSFET from ROHM. This product has the advantages of low on-state resistance, low drive voltage and high power package, which is suitable for internal circuit switching and other applications.
The TT8M2 is a dual MOSFET device that integrates a low‑on‑resistance N‑channel MOSFET (2.5 V drive) and a low‑voltage P‑channel MOSFET (1.5 V drive) in a high‑power package. It is intended for switching applications in audio‑visual, office‑automation, communication and other general‑use electronic equipment.
Key parameters include a 30 V drain‑source rating for the N‑channel, +12 V gate‑source rating, continuous drain current of 42.5 A, and a typical total gate charge of 3.2 nC. The datasheet also details packaging, absolute maximum ratings, and measurement circuit examples.
| Drain‑source voltage (N‑channel) | 30 V |
|---|---|
| Gate‑source voltage (N‑channel) | +12 V |
| Continuous drain current (N‑channel) | 42.5 A |
| Pulsed drain current (N‑channel) | +10 A |
| Power dissipation per element | 1.0 W |
| Channel temperature | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 180 pF |
| Output capacitance (Coss) | 60 pF |
| Reverse transfer capacitance (Crs) | 35 pF |
The N‑channel MOSFET can withstand up to 30 V drain‑source voltage.
The typical total gate charge is 3.2 nC.
It is supplied in a package‑taping type code TR with a basic ordering unit of 3000 pieces.