2.5V Drive Nch MOSFET TT8K2 is a low voltage driven MOSFET with low on-state resistance and fast switching. It is suitable for internal circuit switching.
The TT8K2 is a 2.5 V drive N‑channel MOSFET from ROHM, designed for switching applications with low on‑state resistance and fast switching.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, packaging dimensions, typical characteristic curves, and measurement circuit diagrams, along with legal notices and usage guidelines.
| Drain‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑source voltage (V_GSS) | +12 V |
| Continuous drain current (I_D) | 42.5 A |
| Pulsed drain current (I_DM) | 10 A |
| Source current (I_S) | 0.8 A |
| Total power dissipation (P_D) | 125 W (total) |
| Channel temperature (T_CH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Gate threshold voltage (V_GS(th)) | 0.5 – 1.5 V |
| Input capacitance (C_iss) | 180 pF |
| Output capacitance (C_oss) | 60 pF |
| Body diode forward voltage | 12 V |
The TT8K2 can tolerate up to 30 V between drain and source.
The device is designed for low‑voltage drive, typically 2.5 V.
The MOSFET can dissipate up to 125 W in total.