This document describes the features and characteristics of the 2SA1579 / 2SA1514K / 2SA1038S high-voltage amplifier transistors, such as high breakdown voltage and complementarity with other transistors.
This document describes three ROHM high‑voltage amplifier transistors (2SA1579, 2SA1514K, 2SA1038S). It lists their key features such as high breakdown voltage (BVCEO = -120 V) and typical applications.
Detailed electrical parameters, absolute maximum ratings, package dimensions, and characteristic curves are provided, along with packaging and marking information. An appendix contains legal and export‑control notices.
| Collector‑base voltage (Vcbo) | 120 V |
|---|---|
| Collector‑emitter voltage (Vceo) | -120 V |
| Emitter‑base voltage (Vebo) | -5 V |
| Collector current (Ic) | -50 mA |
| Power dissipation (2SA1579/2SA1514K) | 0.2 W |
| Power dissipation (2SA1038S) | 0.3 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Transition frequency (fT) | 140 MHz |
| Output capacitance (Cob) | 3.2 pF |
| DG current transfer ratio | 180‑560 |
The maximum collector‑base voltage is 120 V.
The devices can be stored from –55 °C to +150 °C.
The packages are UMT3 (SOT‑323), SMT3 (SOT‑346) and SPT (SOT‑72).
The transition frequency is specified as 140 MHz.