TT8U1 is a low voltage drive Pch+SBD MOSFET produced by ROHM. The product has the characteristics of low voltage drive, high power package and low switching loss. It is mainly used in switching power supply circuits.
The TT8U1 is a silicon P‑channel MOSFET combined with a Schottky barrier diode, designed for low‑voltage (1.5 V) drive applications. Key features include low on‑resistance, a high‑power package, and suitability for switching circuits.
The document lists detailed absolute‑maximum ratings, electrical characteristics, typical output curves, and measurement circuit diagrams. Packaging information, dimensions, and safety notices are also included to aid designers in integrating the device into electronic equipment.
| Drain‑source voltage (Voss) | -20 V |
|---|---|
| Gate‑source voltage (Vass) | +10 V |
| Continuous drain current (Ib) | 2.4 A |
| Power dissipation (Pp) | 1.0 W/element |
| Junction temperature (Tj) | 150 °C |
| Repetitive peak reverse voltage (Vem) | 30 V |
The maximum drain‑source voltage is -20 V.
It is a 1.5 V drive P‑channel MOSFET.
The forward voltage drop is 0.41 V at 1.0 A.
Each lead has the same dimensions; the package type code is TR with a basic ordering unit of 3000 pieces.