TT8U2 is a Pch +SBD MOSFET produced by Rohm. It has the characteristics of high switching speed and low on-resistance. The working voltage is 1.5V. It has a built-in low IR Schottky diode.
The TT8U2 is a silicon P‑channel MOSFET combined with a Schottky barrier diode in a TSST8 package. It offers high‑speed switching, low on‑resistance, and can be driven at low voltage (1.5 V). The device includes a built‑in low‑current Schottky diode for reverse‑current protection.
Typical applications are switching circuits in audio‑visual equipment, office‑automation devices, communication gear and other general‑use electronic products. The datasheet includes packaging details, absolute maximum ratings, electrical characteristics, characteristic curves, and measurement circuit diagrams.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 2.4 A |
| Pulsed drain current (ID,pulse) | 9.6 A |
| Power dissipation (PD) | 1.0 W |
| Junction temperature (Tj) | 150 °C |
| Gate‑source leakage current | ≤100 nA |
The device is rated for a drain‑source voltage of –20 V.
Gate‑source leakage is up to 100 nA under VGS = +10 V.
The TT8U2 can conduct a continuous drain current of 2.4 A.
Power dissipation is limited to 1.0 W per element.