EM6K7 is a Nch+Nch MOSFET produced by ROHM Co., Ltd. It features low voltage drive (1.2V) and space-saving.
The EM6K7 is a 1.2 V drive N‑channel MOSFET designed for portable equipment. It features independent MOSFET elements to eliminate mutual interference, reduced mounting cost and area, and low‑voltage operation.
The datasheet lists key parameters such as a 20 V drain‑source rating, +8 V gate‑source rating, continuous drain current of 200 mA, pulsed drain current of 400 mA, and a total power dissipation of 120 mW. Packaging is supplied in a T2R tape with a basic ordering unit of 8 000 pieces.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 400 mA |
| Total power dissipation (PD) | 120 mW |
| Maximum channel temperature (TCH) | 150 °C |
The device can withstand up to 20 V between drain and source.
A low drive voltage of 1.2 V is ideal for portable equipment.
The MOSFET is supplied in a tape‑and‑reel package with type code T2R.