This document describes the structure, dimensions, features, and applications of the 1.2V Drive Pch MOSFET EM6J1 produced by ROHM Co., Ltd.
The EM6J1 is a silicon P‑channel MOSFET offered in an EMT6 package that contains two MOSFETs. It features high‑speed switching, ultra‑low 1.2 V drive capability, and a built‑in gate‑source protection diode, making it suitable for switching applications.
The sheet lists packaging details, absolute maximum ratings, electrical characteristics, thermal resistance, and measurement circuits. It also includes a notice about proper ESD protection and usage limits for reliable operation in general‑purpose electronic equipment.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | ±20 V |
| Continuous drain current (ID) | +200 mA |
| Pulsed drain current (ID,pulse) | +800 mA |
| Total power dissipation | 150 mW total, 120 mW per element |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (junction‑to‑ambient) | 8.38 °C/W total, 10.42 °C/W per element |
| Input capacitance (Ciss) | 115 pF |
| Output capacitance (Coss) | 10 pF |
| Reverse transfer capacitance (Crs) | 6 pF |
| Turn‑on delay time | 6 ns |
| Rise time | 4 ns |
| Turn‑off delay time | 17 ns |
| Total gate charge (Qg) | 1.4 nC |
The EM6J1 can tolerate a drain‑source voltage of up to –20 V.
It is rated for a continuous drain current of 200 mA.
The device is supplied in an EMT6 package that contains two P‑channel MOSFETs.
The input capacitance (Ciss) is specified as 115 pF.