This document introduces the structure, features, applications, and packaging specifications of ROHM's 1.5V Drive Pch + Pch MOSFET TT8J13. It is a silicon P-channel MOSFET with low on-resistance, small high power package, and low voltage drive capabilities.
The ROHM TT8J13 is a 1.5 V drive P‑channel MOSFET offered in a small high‑power package. The datasheet provides detailed electrical specifications, absolute maximum ratings, thermal characteristics, and typical performance curves.
Key sections cover features, packaging, maximum ratings, thermal resistance, electrical characteristics, body‑diode data, characteristic curves, measurement circuits, and legal notices. The document is intended for designers integrating the device into general‑use electronic equipment.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | 0 to -8 V |
| Continuous drain current (ID) | +2.5 A |
| Pulsed drain current (IDP) | +5 A |
| Power dissipation (PD) | 1.25 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range (TSTG) | -55 °C to +150 °C |
| Thermal resistance (Rth ch‑a) | 100 °C/W |
The maximum drain‑source voltage is -12 V.
The device supports a gate‑source voltage from 0 to -8 V.
The continuous drain current rating is +2.5 A.
The maximum power dissipation is 1.25 W.