EM6K6 is a Nch+Nch MOSFET with 1/3 1.8V drive. It features independent MOSFET elements, low on-resistance, and low voltage drive, making it suitable for switching applications and portable equipment.
The EM6K6 is a 1.8 V drive N‑channel MOSFET featuring low on‑resistance and independent MOSFET elements that eliminate mutual interference. Its compact T2R 8000 package reduces mounting cost and board area, making it suitable for portable equipment.
Typical applications include switching circuits in audio‑visual, office‑automation, communications, and consumer electronic devices. The datasheet includes absolute maximum ratings, thermal resistance, electrical characteristics, and recommended usage notes for reliable circuit design.
| Maximum drain current (ID) | 300 mA |
|---|---|
| Gate drive voltage | 1.8 V |
The EM6K6 can handle up to 300 mA of drain current.
The device is designed for a low 1.8 V gate drive voltage.