This document describes the features and characteristics of the EM6K33 product from ROHM Co. Ltd., including high-speed switching, small package size, and ultra-low voltage drive.
The EM6K33 is a 1.2 V drive N‑channel MOSFET designed for high‑speed switching in a compact EMT6 package. It offers ultra‑low voltage drive, a small footprint, and typical on‑resistance suitable for low‑power applications.
The datasheet lists key parameters such as a 50 V drain‑source rating, 200 mA continuous drain current, 1.9 Ω typical on‑resistance at 100 mA, and a thermal resistance of about 8.38 °C/W. Electrical characteristics, characteristic curves, and measurement circuits are also provided for design reference.
| Drain‑source voltage (VDS) max | 50 V |
|---|---|
| Gate‑source voltage (VGS) max | +8 V |
| Continuous drain current (ID) max | 200 mA |
| Pulsed drain current (ID) max | 800 mA |
| Power dissipation (PD) max | 150 mW total |
| Thermal resistance (RθJA) | 8.38 °C/W |
| On‑resistance (RDS(on)) typical | 1.9 Ω at ID=100 mA, VDS=1.8 V |
| Input capacitance (CISS) typical | 25 pF |
| Output capacitance (COSS) typical | 6 pF |
| Gate threshold voltage (VGS(th)) | 0.3 V – 1.0 V |
The EM6K33 can withstand up to 50 V between drain and source.
At a drain current of 100 mA and VDS = 1.8 V, the typical on‑resistance is about 1.9 Ω.
The device is supplied in a small EMT6 package.
The MOSFET is designed for ultra‑low voltage drive, operating with a gate voltage as low as 1.2 V.