EM6K31 is a Nch+Nch MOSFET from ROHM with high switching speed, small package and low drive voltage, suitable for switching applications.
The EM6K31 is a silicon N‑channel MOSFET offered by ROHM in a small EMT6 package. It features high‑speed switching, a low 2.5 V drive voltage, and is intended for general‑purpose switching applications such as audio‑visual equipment, office automation, and consumer electronics.
The document provides detailed electrical characteristics, absolute maximum ratings, thermal resistance data, and typical application circuits. It also includes measurement methods, characteristic curves, and legal notices regarding usage and export compliance.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Continuous drain current (ID) | 250 mA |
| Power dissipation (PD) | 150 mW |
| Maximum channel temperature (TCH) | 150 °C |
The device can withstand up to 60 V between drain and source.
It is rated for a continuous drain current of 250 mA.
The MOSFET is designed for a low‑voltage drive of 2.5 V, with a maximum gate‑source voltage of 20 V.
The part can dissipate up to 150 mW under the specified conditions.